a p04n60h-h-hf advanced power n-channel enhancement mode electronics corp. power mosfet 100% avalanche test bv dss 700v fast switching characteristic r ds(on) 2.8 simple drive requirement i d 4a rohs compliant & halogen-free description absolute maximum ratings symbol units v ds drain-source voltage v v gs gate-source voltage v i d @t c =25 continuous drain current, v gs @ 10v a i d @t c =100 continuous drain current, v gs @ 10v a i dm pulsed drain current 1 a p d @t c =25 total power dissipation w p d @t a =25 total power dissipation 4 w e as single pulse avalanche energy 3 mj t stg storage temperature range t j operating junction temperature range thermal data symbol parameter value units rthj-c maximum thermal resistance, junction-case 2.1 /w rthj-a 62.5 /w data & specifications subject to change without notice 201301211 1 -55 to 150 -55 to 150 maximum thermal resistance, junction-ambient (pcb mount) 4 15 2.2 halogen-free product parameter rating 700 8 + 30 4 59.5 2 g d s g d s to-252(h) a p04n60 series are specially designed as main switching devices for universal 90~265vac off-line ac/dc converter applications. it provide high blocking voltage to overcome voltage surge and sag in the toughest power system with the best combination of fast switching design and cost-effectiveness. the to-252 package is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance.
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 700 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =2a - - 2.8 v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 4 v g fs forward transconductance v ds =10v, i d =2a - 3.4 - s i dss drain-source leakage current v ds =480v, v gs =0v - - 100 ua i gss gate-source leakage v gs =+ 30v, v ds =0v - - + 100 na q g total gate charge i d =1a - 19 30 nc q gs gate-source charge v ds =480v - 3.5 - nc q gd gate-drain ("miller") charge v gs =10v - 8 - nc t d(on) turn-on delay time v dd =300v - 20 - ns t r rise time i d =2a - 20 - ns t d(off) turn-off delay time r g =50 - 100 - ns t f fall time v gs =10v - 25 - ns c iss input capacitance v gs =0v - 740 1200 pf c oss output capacitance v ds =25v - 70 - pf c rss reverse transfer capacitance f=1.0mhz - 10 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =2a, v gs =0v - - 1.5 v t rr reverse recovery time i s =2a, v gs =0v - 310 - ns q rr reverse recovery charge di/dt=100a/s - 2.9 - c notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.starting t j =25 o c , v dd =50v , l=1mh , r g =25 this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 4.surface mounted on 1 in 2 copper pad of fr4 board AP04N60H-H-HF
AP04N60H-H-HF fig 1. typical output characteristics fig 2. typical output characteristics fig 3. normalized bv dss v.s. junction fig 4. normalized on-resistance temperature v.s. junction temperature fi g 5. forward characteristic o f fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0.8 0.9 1 1.1 1.2 -50 0 50 100 150 t j , junction temperature ( o c) normalized bv dss 0 2 4 6 8 0 4 8 12 16 20 24 28 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 8.0v 7.0v 6.0v v g =5.0v 0 1 2 3 4 5 0 4 8 1216202428 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c 10v 8.0v 7.0v 6.0v v g =5.0v 0 1 2 3 -50 0 50 100 150 t j , junction temperature ( o c ) normalized r ds(on) i d =2a v g =10v 0 2 4 6 8 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 v sd , source-to-drain voltage (v) i s (a) t j = 25 o c t j = 150 o c 0.4 0.6 0.8 1 1.2 1.4 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th)
AP04N60H-H-HF fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0 2 4 6 8 10 12 0 4 8 12 16 20 24 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =1a v ds =480v 0 200 400 600 800 1000 1200 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 10v q gs q gd q g charge 0.01 0.1 1 10 100 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a) t c =25 o c s ingle pulse 100us 1ms 10ms 100ms dc operation in this area limited by r ds(on)
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